Improving the stability of amorphous silicon tandem cells

Author

Ouwens, J. Daey ; Schropp, R.E.I.

Author_Institution

Dept. of Atomic & Interface Phys., Utrecht Univ., Netherlands

Volume

1

fYear

1994

fDate

5-9 Dec 1994

Firstpage

650

Abstract

We present an optimization procedure for a-SiC:H/a-Si:H tandem cells to limit light induced degradation effects. Optimum deposition conditions are combined with an optimum light trapping configuration, that has been determined by optical modelling. Upon light soaking, a remarkable light-induced behaviour is observed. The open circuit voltage (V_oc) in the degraded state is higher than in the annealed state

Keywords

Staebler-Wronski effect; amorphous semiconductors; elemental semiconductors; hydrogen; optical saturable absorption; silicon; solar cells; SiC:H-Si:H; Staebler-Wronski effect; a-SiC:H/a-Si:H tandem cells; amorphous silicon tandem cells; annealed state; degraded state; light soaking; light-induced behaviour; open circuit voltage; optimization procedure; optimum deposition conditions; optimum light trapping configuration; stability improvement; Amorphous silicon; Bonding; Degradation; Hydrogen; Interference; Light scattering; Optical films; Optical scattering; Photonic band gap; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520045

Filename

520045