Title :
A Low-Power Low-Noise Single-Chip Receiver Front-End for Automotive Radar at 77 GHz in Silicon-Germanium Bipolar Technology
Author :
Hartmann, Marcus ; Wagner, Christoph ; Seemann, Kay ; Platz, Johannes ; Jäger, Herbert ; Weigel, Robert
Author_Institution :
Friedrich-Alexander-Univ. Erlangen-Nuremberg., Erlangen
Abstract :
This paper presents a single chip receiver front-end, including low-noise amplifier and mixer, for application in automotive radar systems at 77 GHz. The circuit has been implemented in a SiGe HBT technology. The complete circuit occupies 1030 times 1130 mum2 including bond pads and dissipates 440 mW from a 5.5 V supply. The front-end shows a minimum measured single sideband noise figure (SSB NF) of 11.5 dB and a maximum conversion gain of 30 dB at 77 GHz. Linearity measurements show a 1 dB input compression point of -26 dBm and a third order intercept point of -21.6 dBm at 77 GHz.
Keywords :
Ge-Si alloys; automotive electronics; bipolar integrated circuits; heterojunction bipolar transistors; low noise amplifiers; low-power electronics; millimetre wave amplifiers; millimetre wave bipolar transistors; millimetre wave integrated circuits; millimetre wave mixers; millimetre wave receivers; road vehicle radar; HBT technology; SiGe; automotive radar; frequency 77 GHz; gain 30 dB; linearity measurements; low-noise amplifier; low-power low-noise single-chip receiver front-end; mixer; noise figure 11.5 dB; power 440 mW; silicon-germanium bipolar technology; voltage 5.5 V; Automotive engineering; Bonding; Circuits; Gain measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Noise measurement; Radar applications; Silicon germanium; 77GHz; Automotive Radar; Front-end Design; LNA; Millimeter Wave; Mixer; SiGe;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0530-0
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2007.380853
