DocumentCode
2987402
Title
Temperature and Process Variations Aware Power Gating of Functional Units
Author
Kannan, Deepa ; Shrivastava, Aviral ; Mohan, Vipin ; Bhardwaj, Sarvesh ; Vrudhula, Sarma
Author_Institution
Arizona State Univ., Tempe
fYear
2008
fDate
4-8 Jan. 2008
Firstpage
515
Lastpage
520
Abstract
Technology scaling has resulted in an exponential increase in the leakage power as well as the variations in leakage power of fabricated chips. Functional units (FUs), like Integer ALUs are regions of high power density and significantly contribute to the variation in the whole processor power consumption. Hence, it is important to reduce both the power consumption and the variation in power consumption of the FUs. Among existing FU power reduction techniques, power gating (PG) has been most effective. In this paper, we introduce a leakage sensor inside the FUs and propose a temperature and process variation aware power gating scheme, Leakage Aware Power Gating (LA-PG). Our experimental results demonstrate that LA-PG results in 22% reduction in mean and a 25% reduction in standard deviation of the ALU energy consumption when compared to existing power gating techniques, without significant performance penalty.
Keywords
logic gates; low-power electronics; microprocessor chips; sensors; ALU energy consumption; functional units; leakage power; leakage sensor; process variations aware power gating; processor power consumption; technology scaling; temperature aware power gating scheme; Electronic design automation and methodology; Energy consumption; Informatics; Laboratories; Manufacturing; Microarchitecture; Power generation; Process design; Temperature sensors; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, 2008. VLSID 2008. 21st International Conference on
Conference_Location
Hyderabad
ISSN
1063-9667
Print_ISBN
0-7695-3083-4
Type
conf
DOI
10.1109/VLSI.2008.83
Filename
4450551
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