V-band planar Gunn oscillators and VCOs on AlN substrates using flip-chip bonding technology

Author

Watanabe, K. ; Deguchi, T. ; Nakagawa, A.

Author_Institution

Res. & Dev. Headquarters, New Japan Radio Co. Ltd., Saitama, Japan

Volume

1

fYear

1999

fDate

13-19 June 1999

Firstpage

13

Abstract

This paper presents the development of V-band planar Gunn oscillators using novel flip-chip GaAs Gunn diodes mounted on aluminum nitride (AlN) substrates. Due to using flip-chip bonding technology and unpackaged Gunn diodes, the Gunn oscillator can be expected to realize low-cost mass production. The Gunn oscillator generates an output power of 63.1 mW at 58.73 GHz with 2.57% conversion efficiency. An excellent phase noise of-87.67 dBc/Hz at 100 kHz off carrier has been achieved. A varactor tunable Gunn VCO with a tuning range of 450 MHz at a center frequency of 60.14 GHz is also demonstrated.

Keywords

Gunn oscillators; circuit tuning; flip-chip devices; hybrid integrated circuits; millimetre wave integrated circuits; millimetre wave oscillators; varactors; voltage-controlled oscillators; 2.57 percent; 58.73 GHz; 60.14 GHz; 63.1 mW; AlN; AlN substrates; GaAs; V-band; flip-chip GaAs Gunn diodes; flip-chip bonding technology; low-cost mass production; phase noise; planar Gunn oscillators; varactor tunable Gunn VCO; Aluminum nitride; Bonding; Diodes; Gallium arsenide; Gunn devices; Mass production; Oscillators; Phase noise; Power generation; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779414

Filename

779414