Title :
Silicon Schottky Diode Power Converters Beyond 100 GHz
Author :
Mishra, C. ; Pfeiffer, U. ; Rassel, R. ; Reynolds, S.
Author_Institution :
Texas A&M Univ., College Station
Abstract :
This paper presents circuits based on Schottky barrier diodes (SBDs) in IBM´s 0.13-mum SiGe BiCMOS process. Circuits such as sub-harmonic up-conversion mixers and frequency doublers are demonstrated at frequencies beyond 100 GHz on silicon. These circuits enable power generation at millimeter wave frequencies on silicon. The frequency doublers can deliver >0 dBm output power at 110 GHz and the 2X sub-harmonic up converters exhibit peak conversion loss of <3 dB up to 120 GHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; Schottky barriers; Schottky diodes; power convertors; power semiconductor devices; silicon; SiGe BiCMOS process; millimeter wave frequency; power converter; silicon Schottky barrier diode; size 0.13 mum; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; Implants; Millimeter wave circuits; Millimeter wave technology; Power generation; Schottky barriers; Schottky diodes; Silicon germanium; Schottky barrier diode; frequency doubler; millimeter wave power generation; sub-harmonic mixer;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0530-0
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2007.380943
