A High Dynamic Range CMOS RF Power Amplifier with a Switchable Transformer for Polar Transmitters

Author

Kim, Younsuk ; Ku, Bon-Hyun ; Park, Changkun ; Lee, Dong Ho ; Hong, Songcheol

Author_Institution

Samsung Electro-Mech. Co., Ltd., Suwon

fYear

2007

fDate

3-5 June 2007

Firstpage

737

Lastpage

740

Abstract

A fully integrated CMOS RF power amplifier for a 1.8 GHz band EDGE polar transmitter is presented. It is implemented with 0.18-mum CMOS process. The output power is 33.4 ~ 33.5 dBm and the power added efficiency is 39 ~ 41 percent when the frequency varies from 1.71 to 1.91 GHz. The dynamic range is increased by 12 dB with the use of the proposed switchable transformer, which meets the EDGE dynamic range requirement of 37 dB when the supply voltage changes from 0.8 to 3.3 V.

Keywords

cellular radio; power amplifiers; EDGE polar transmitter; frequency 1.71 GHz to 1.91 GHz; frequency 1.8 GHz; high dynamic range CMOS RF power amplifier; switchable transformer; voltage 0.8 V to 3.3 V; Dynamic range; High power amplifiers; Impedance; Linearity; Power amplifiers; Power generation; Radio frequency; Radio transmitters; Radiofrequency amplifiers; Switching circuits; CMOS integrated circuits; MMIC power amplifiers; MOSFET power amplifiers; UHF power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE

Conference_Location

Honolulu, HI

ISSN

1529-2517

Print_ISBN

1-4244-0530-0

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2007.380988

Filename

4266536