• DocumentCode
    2990672
  • Title

    Investigation on moisture diffusion in COB packaging [chip on board]

  • Author

    Huang, Weidong ; Wang, Xuhong ; Wang, Li ; Sheng, Mei ; Xu, Liqiang ; Stubhan, Frank ; Luo, Le

  • Author_Institution
    DaimlerChrysler SIM Technol. Co., Ltd., Shanghai, China
  • fYear
    2003
  • fDate
    28-30 Oct. 2003
  • Firstpage
    392
  • Lastpage
    395
  • Abstract
    The moisture diffusion in globtop material, globtop coated with SiNx film, globtop coated with silicone and globtop coated with SiNx plus silicone were measured by humidity sensors wire-bonded on FR4 boards in three different temperature/humidity environments. The experimental results were simulated by the finite element method and Fick diffusion law. The moisture diffusion coefficients were calculated to quantitatively compare various coatings´ moisture-resistance. Our experimental and simulation results show that a double-layered coating with SiNx plus silicone has excellent moisture-resistance because it can not only smooth the steps on the PCB but also keep the good moisture-resistance of inorganic films.
  • Keywords
    chip-on-board packaging; conformal coatings; diffusion; encapsulation; finite element analysis; moisture; plastic packaging; silicon compounds; silicones; COB moisture diffusion coefficients; FR4 boards; Fick diffusion law; SiN; chip on board packaging; coating moisture-resistance; conformal coating; epoxy-based globtop materials; finite element method; globtop encapsulated COB; globtop material moisture diffusion; moisture ingress; plastic encapsulation; silicone; temperature/humidity environment; wire-bonded humidity sensors; Absorption; Coatings; Corrosion; Humidity measurement; Materials science and technology; Moisture measurement; Packaging; Plasma temperature; Protection; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology Proceedings, 2003. ICEPT 2003. Fifth International Conference on
  • Conference_Location
    Shanghai, China
  • Print_ISBN
    0-7803-8168-8
  • Type

    conf

  • DOI
    10.1109/EPTC.2003.1298768
  • Filename
    1298768