• DocumentCode
    2990945
  • Title

    High power, broad spectral width, 1300nm quantum-dot superluminescent diodes

  • Author

    Krakowski, Michel ; Resneau, Patrick ; Calligaro, Michel ; Hugues, Maxime ; Hopkinson, Mark ; Gioannini, Mariangela ; Bardella, Paolo ; Montrosset, Ivo

  • Author_Institution
    Alcatel Thales III-V Lab., Palaiseau
  • fYear
    2008
  • fDate
    14-18 Sept. 2008
  • Firstpage
    23
  • Lastpage
    24
  • Abstract
    1300 nm InAs quantum dot narrow ridge superluminescent diodes have reached a high power of 70 mW/facet under CW operation, together with a broad spectral width of 80 nm.
  • Keywords
    III-V semiconductors; indium compounds; laser beams; quantum dot lasers; superluminescent diodes; CW operation; InAs; SLD; high power diodes; narrow ridge superluminescent diodes; power 70 mW; quantum dot lasers; quantum-dot superluminescent diodes; wavelength 1300 nm; Chirp; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Optical sensors; Quantum dot lasers; Quantum dots; Stimulated emission; Superlattices; Superluminescent diodes; 1300nm wavelength; Quantum dot superluminescent diodes; broad spectral width; high optical power;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
  • Conference_Location
    Sorrento
  • Print_ISBN
    978-1-4244-1782-7
  • Electronic_ISBN
    978-1-4244-1783-4
  • Type

    conf

  • DOI
    10.1109/ISLC.2008.4635990
  • Filename
    4635990
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2990945