An analysis of possibility of an ionizing radiation detector development on the base of a heterobipolar amplification element

Author

Ayzenshtat, G.I. ; Khan, A.V. ; Tolbanov, O.P. ; Mokeev, D.U.

Author_Institution

Semicond. Devices Res. Inst., Sci. & Production State Enterprise, Tomsk, Russia

fYear

2000

fDate

2000

Firstpage

160

Lastpage

161

Abstract

An analysis of operation of an ionizing radiation detector on the base of the transistor heterostructure AlGaAs has been carried out. It has been shown that in such a detector there is a possibility to magnify a signal from one gamma quantum. A three-dimensional pattern of the electric field created by a bunch of non-equilibrium holes has been taking into account for the analysis

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gamma-ray detection; heterojunction bipolar transistors; semiconductor counters; AlGaAs; AlGaAs heterojunction bipolar transistor; gamma-ray detection; ionizing radiation detector; nonequilibrium holes; signal amplification; three-dimensional electric field; Bipolar transistors; Charge carrier processes; Charge carriers; Current density; Electrons; Gamma ray detection; Gamma ray detectors; Ionizing radiation; Radiation detectors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Instrument Engineering Proceedings, 2000. APEIE-2000. Volume 1. 2000 5th International Conference on Actual Problems of

Conference_Location

Novosibirsk

Print_ISBN

0-7803-5903-8

Type

conf

DOI

10.1109/APEIE.2000.913112

Filename

913112