DocumentCode
2991435
Title
638nm single lateral mode laser diode for Micro-Projector application
Author
Yukawa, Makoto ; Shimada, Naoyuki ; Shibata, Kimitaka ; Ono, Ken-ichi ; Yagi, Tetsuya
Author_Institution
High Freq.&Opt. Semicond. Div., Mitsubishi Electr. Corp., Itami
fYear
2008
fDate
14-18 Sept. 2008
Firstpage
73
Lastpage
74
Abstract
The high-power operation of the lateral single mode 638 nm AlGaInP laser diode was demonstrated. The stable operation up to 220 mW at 55degC was realized. This is the highest power record among the narrow stripe 638-nm LDs. This LD is suitable for micro-projector.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; laser modes; laser stability; light sources; micro-optics; optical projectors; semiconductor lasers; AlGaInP; high-power operation; microprojector application; narrow stripe LD; power 220 mW; single lateral mode laser diode; solid-state light sources; stable laser operation; temperature 55 C; wavelength 638 nm; Diode lasers; Laser beams; Light sources; Lighting; Mirrors; Optical waveguides; Power generation; Power lasers; Quantum well lasers; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location
Sorrento
Print_ISBN
978-1-4244-1782-7
Electronic_ISBN
978-1-4244-1783-4
Type
conf
DOI
10.1109/ISLC.2008.4636015
Filename
4636015
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