Title :
Electrical Properties of p-Type Al - N Codoped ZnO Thin Films
Author :
Hamid, Haslinda Abdul ; Abdullah, Mat Johar ; Aziz, Azlan Abdul ; Rosli, Siti Azlina
Author_Institution :
Univ. Sains Malaysia, Minden
fDate :
Oct. 29 2006-Dec. 1 2006
Abstract :
Aluminium doped zinc thin films were deposited on silicon substrates using direct current (DC) magnetron sputtering in argon atmosphere. These films were then annealed in nitrogen-oxygen mixed gases for 1 hour at temperature range of 200degC to 500degC. P-type conduction of Al - N codoped ZnO thin films were obtained for all temperatures with a high hole concentration of 1.85 times 1022 cm-3.
Keywords :
II-VI semiconductors; aluminium; annealing; electrical conductivity; hole density; nitrogen; semiconductor doping; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; Si; ZnO:Al,N; annealing; codoped semiconductor thin films; direct current magnetron sputtering; electrical properties; hole concentration; nitrogen-oxygen mixed gases; p-type conduction; silicon substrates; temperature 200 degC to 500 degC; time 1 hour; Aluminum; Annealing; Argon; Atmosphere; Gases; Semiconductor thin films; Silicon; Sputtering; Transistors; Zinc oxide;
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
DOI :
10.1109/SMELEC.2006.381113
