Title :
Characterization of Si3N4 Metal-Insulator-Metal (MIM) Capacitors for Monolithic Microwave Integrated Circuits (MMIC) Applications
Author :
Guan, Lee Hock ; Osman, Mohd Nizam ; Dolah, Asban ; Rahim, Ahmad Ismat Abdul ; Yahya, Mohamed Razman ; Mat, Abdul Fatah Awang
Author_Institution :
UPM-MTDC, Serdang
fDate :
Oct. 29 2006-Dec. 1 2006
Abstract :
The fabrication of the MIM capacitors is illustrated in the paper. The effective capacitor areas are designed at 60 times 60, 240 times 240 and 380 times 380 mum2. From the s- parameter measurements, the fabricated capacitors showed capacitive capability up to frequency of 40 GHz. Strong parasitic effect was observed at low frequency while attenuation effect was observed at high frequency.
Keywords :
MIM devices; MMIC; silicon compounds; Si3N4; fabricated capacitors; metal-insulator-metal capacitors; monolithic microwave integrated circuits; Application specific integrated circuits; Attenuation; Fabrication; Frequency measurement; Integrated circuit measurements; MIM capacitors; MMICs; Metal-insulator structures; Microwave integrated circuits; Monolithic integrated circuits;
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
DOI :
10.1109/SMELEC.2006.380683
