Title :
High power, low threshold 1060-nm InGaAs/AlGaAs quantum dot lasers
Author :
Pavelescu, E.-M. ; Gilfert, C. ; Reithmaier, J.P. ; Martín-Mínguez, A. ; Esquivias, I.
Author_Institution :
Inst. of Nanostrcture Technol.&Analytics (INA), Univ. of Kassel, Kassel
Abstract :
1060-nm InGaAs/(Al)GaAs quantum-dot laser material was developed with optimized dot geometry to allow high output powers of more than 4.5 W for a broad area laser in pulsed operation and a low transparency current density of 83 A/cm2.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; laser beams; quantum dot lasers; semiconductor quantum dots; transparency; InGaAs-AlGaAs; broad area laser; high power low threshold 1060-nm laser; low transparency current density; pulsed laser operation; quantum dot laser; wavelength 1060 nm; Indium gallium arsenide; Optical harmonic generation; Optical materials; Optical superlattices; Power generation; Power lasers; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4636031
