Design and Simulation of 50 nm Vertical Double-Gate MOSFET (VDGM)

The paper demonstrate the design and simulation study of 2D vertical double- gate MOSFET (VDGM) with an excellent short channel effect (SCE) characteristics. With the gate length of 50 nm, body doping of 3.5 times 10¹⁸ cm^-3 and oxide thickness, T_OX = 2.5 nm, a good drive current I_ON of 7 muA/mum and a low off-state leakage current I_OFF of 2 pA/mum was explicitly shown. Besides that, the subthreshold characteristics also highlighted a reasonably well-controlled SCE with subthreshold swing SubV_T = 89 mV/decade and threshold voltage V_T = 0.56 V. The analysis of body doping effects for SCE optimization and drive current trade-off was also done for an overall investigation and limit of the VDGM.