Tunneling and Short Channel Effects in Ultrascaled InGaAs Double Gate MOSFETs

Full-band quantum transport simulations are performed to study the scaling of InGaAs MOSFETs. Short-channel effects evoke severe performance degradation in InGaAs MOSFETs and the tunneling leakage further deteriorates their performances. Reducing the body width is shown to suppress the short channel effects. Doping densities show big impacts on device performances. With inhomogeneous doping InGaAs could outperform Si at gate lengths below 15 nm with 5-nm body width. The density of state bottleneck does not affect InGaAs in simulated devices at 0.5 V supply voltage. At the ultrascaled dimensions the full band simulations are essential to capture strong nonparabolic dispersion. Comparison with a multivalley effective mass model shows that the population of higher conduction band valleys contributes to the total current at thin body widths.