Title :
Design of an RF BJT-Low Noise Amplifier at 1GHz
Author :
Fatmadiana, Sharifah ; Hatta, Wan Muhamad ; Soin, Norhayati
Author_Institution :
Univ. Malaya, Kuala Lumpur
fDate :
Oct. 29 2006-Dec. 1 2006
Abstract :
A fully-integrated RF low noise amplifier (LNA) suitable for low-voltage applications is proposed using bipolar junction transistors (BJT) cascaded stages. The proposed design aims to provide gain with low bias current consequently lower power dissipation and lower noise figure (NF). The circuit is designed and simulated using MultiSim9 from Electronics Workbench Design Suite Edition 9. The proposed amplifier exhibits 3.296 dB small- signal gain, reverse isolation of -6.68 dB and 0.359 dB noise figure at 1GHz.
Keywords :
bipolar transistors; low noise amplifiers; MultiSim9; RF BJT-low noise amplifier; bipolar junction transistor; frequency 1 GHz; gain 3.296 dB; loss -6.68 dB; low-voltage application; noise figure; noise figure 0.359 dB; power dissipation; radio frequency; Capacitance; Circuit simulation; Circuit topology; Impedance; Low-noise amplifiers; Noise figure; Radio frequency; Radiofrequency amplifiers; Resistors; Wireless communication;
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
DOI :
10.1109/SMELEC.2006.380735
