• DocumentCode
    2992837
  • Title

    Temperature-Insensitive Wavelength Emission and Absorption Characteristics of GaNAsBi/GaAs DH Diodes

  • Author

    Oe, K. ; Tanaka, Y. ; Huang, W. ; Feng, G. ; Yamashita, K. ; Kondo, Y. ; Tsuji, S. ; Yoshimoto, M.

  • Author_Institution
    Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan, oeku@dj.kit.ac.jp
  • fYear
    2006
  • fDate
    24-28 Sept. 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Temperature-insensitive wavelength electroluminescent emission and absorption characteristics are obtained from GaNyAs1-x-yBix/GaAs double-heterostructure diodes. The temperature dependence of the EL peak wavelength and the absorption edge is 0.09 nm / K and 0.2 meV / K, respectively.
  • Keywords
    Absorption; Bismuth; DH-HEMTs; Electroluminescence; Fiber lasers; Gallium arsenide; Molecular beam epitaxial growth; Photonic band gap; Plasma temperature; Semiconductor diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communications, 2006. ECOC 2006. European Conference on
  • Conference_Location
    Cannes, France
  • Print_ISBN
    978-2-912328-39-7
  • Electronic_ISBN
    978-2-912328-39-7
  • Type

    conf

  • DOI
    10.1109/ECOC.2006.4801232
  • Filename
    4801232
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2992837