DocumentCode
2993333
Title
1.1 μm-range low resistive VCSELs with buried type-II tunnel junctions
Author
Yashiki, K. ; Suzuki, N. ; Fukatsu, K. ; Anan, T. ; Hatakeyama, H. ; Tsuji, M.
Author_Institution
System Device Research Laboratories, NEC Corporation, 9-1, Seiran 2-chome, Otsu, Shiga 520-0833, Japan, e-mail:k-yashiki@bc.jp.nec.com
fYear
2006
fDate
24-28 Sept. 2006
Firstpage
1
Lastpage
2
Abstract
We propose 1.1-μm-range VCSELs with buried Type-II tunnel junctions (BTJs). Due to the small electrical resistance of the Type-II tunnel junction, the chip resistance was reduced by half as compared with oxide confined VCSELs. The BTJ-VCSELs were lased up to 120°C.
Keywords
Apertures; Bandwidth; Electric resistance; Gallium arsenide; Indium gallium arsenide; Optical arrays; Optical interconnections; Photonic band gap; Tunneling; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communications, 2006. ECOC 2006. European Conference on
Conference_Location
Cannes, France
Print_ISBN
978-2-912328-39-7
Electronic_ISBN
978-2-912328-39-7
Type
conf
DOI
10.1109/ECOC.2006.4801257
Filename
4801257
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