InP/InGaAs double HBTs with high CW power density at 10 GHz

Author

Bauknecht, R. ; Melchior, H.

Author_Institution

Inst. for Quantum Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland

fYear

1997

fDate

11-15 May 1997

Firstpage

28

Lastpage

31

Abstract

High-performance InP/InGaAs double HBTs operating in common-emitter mode with 7.5 W/mm output power density at 10 GHz are reported. A total output power of 600 mW was achieved with five-finger cells having total emitter areas of 176 μm². Their f_T and f_max values are 74 GHz and 89 GHz, respectively. These cells exhibit small-signal maximum stable power gains of 17 dB and Mason´s unilateral power gains of 20 dB at 10 GHz

Keywords

III-V semiconductors; S-parameters; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power transistors; power bipolar transistors; 10 GHz; 17 dB; 20 dB; 600 mW; 74 GHz; 89 GHz; InP-InGaAs; InP/InGaAs double HBTs; Mason unilateral power gain; common-emitter mode; cutoff frequency; five-finger cells; high CW power density; maximum frequency of oscillation; small-signal maximum stable power gains; total emitter area; total output power; Diode lasers; Double heterojunction bipolar transistors; Driver circuits; Epitaxial layers; Gain; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Power generation; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600020

Filename

600020