Overgrowth of InGaAsP materials on rectangular-patterned gratings using GSMBE

Author

Koontz, E.M. ; Lim, M.H. ; Wong, V.V. ; Petrich, G.S. ; Kolodziejski, L.A. ; Smith, Henry I. ; Goorsky, M.S. ; Matney, K.M.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

fYear

1997

fDate

11-15 May 1997

Firstpage

62

Lastpage

65

Abstract

Periodic perturbations of the refractive index is a foundation for realizing InP-based single mode photonic devices for all-optical communication networks. In order to achieve a particular refractive index modulation, such as that required by distributed feedback lasers and Bragg grating resonators, the periodic structure must reside within the device, necessitating epitaxial overgrowth. Results of an investigation of a low temperature oxide removal technique combined with gas source molecular beam epitaxial overgrowth of X-ray lithographically patterned rectangular gratings will be presented

Keywords

III-V semiconductors; chemical beam epitaxial growth; diffraction gratings; gallium arsenide; indium compounds; optical fabrication; refractive index; semiconductor epitaxial layers; semiconductor growth; Bragg grating resonator; GSMBE; InGaAsP; X-ray lithography; all-optical communication network; distributed feedback laser; gas source molecular beam epitaxial overgrowth; low temperature oxide removal; periodic structure; rectangular-patterned grating; refractive index modulation; single mode photonic device; Bragg gratings; Communication networks; Distributed feedback devices; Gas lasers; Laser feedback; Laser modes; Optical materials; Periodic structures; Refractive index; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600029

Filename

600029