Title :
Electrical characterization of high resistivity InP and optically fast (sub-picosecond) InGaAsP grown by He-plasma-assisted epitaxy
Author :
Robinson, B.J. ; Thompson, D.A. ; Lumley, O.J. ; McMaster, S.A. ; Zhao, J. ; Pinkney, H. ; Qian, Li ; Benjamin, S.D. ; Smith, P.W.E.
Author_Institution :
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Abstract :
Defects, intrinsic and extrinsic, are routinely used to tailor the electrical and optical properties of semiconductors. For example, an epitaxial technique using low growth temperatures has been used to produce As clusters in GaAs resulting in highly resistive, optically fast material with applications to picosecond switching and radiation hardening. For InP-based materials, a plasma assisted epitaxial technique has been developed at McMaster University which results in high resistivity (>105 Ω-cm) InP and optically fast (sub-picosecond) InGaAsP with a band-gap wavelength of 1.5 μm. The initial electrical characterization of the plasma-generated traps responsible for the observed behaviour is presented in this submittal
Keywords :
III-V semiconductors; chemical beam epitaxial growth; electrical resistivity; electron traps; gallium arsenide; high-speed optical techniques; indium compounds; plasma deposition; semiconductor epitaxial layers; semiconductor growth; 1.5 micron; He; InGaAsP; InP; electrical properties; high resistivity InP; optical properties; optically fast InGaAsP; plasma assisted epitaxial growth; semiconductor; sub-picosecond switching; trap defects; Conductivity; Gallium arsenide; Indium phosphide; Optical materials; Plasma applications; Plasma materials processing; Plasma temperature; Plasma waves; Radiation hardening; Semiconductor materials;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600031
