A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs

Author

Curtice, W.R. ; Pla, J.A. ; Bridges, D. ; Liang, T. ; Shumate, E.E.

Author_Institution

W.R. Curtice Consulting, Washington Crossing, PA, USA

Volume

2

fYear

1999

fDate

13-19 June 1999

Firstpage

419

Abstract

The development and behavior of a new model for Motorola´s LDMOS transistor is described. The model includes self-heating effects, produces accurate small-signal simulations as well as large-signal, harmonic-balance simulations and also operates in the transient mode. It is simpler than previous models, yet it accurately predicts mixed signal effects, such as intermodulation distortion.

Keywords

UHF field effect transistors; capacitance; elemental semiconductors; equivalent circuits; intermodulation distortion; microwave field effect transistors; microwave power transistors; power MOSFET; semiconductor device models; silicon; thermal analysis; 0.5 to 12 GHz; IMD prediction; Motorola LDMOS transistor; Si; Si RF LDMOS FETs; dynamic electro-thermal nonlinear model; harmonic-balance simulations; intermodulation distortion; large-signal simulations; mixed signal effects; self-heating effects; small-signal simulations; transient mode; Capacitance; Circuit simulation; Current measurement; FETs; Isothermal processes; Nonlinear equations; Radio frequency; Silicon; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779792

Filename

779792