Title :
A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs
Author :
Curtice, W.R. ; Pla, J.A. ; Bridges, D. ; Liang, T. ; Shumate, E.E.
Author_Institution :
W.R. Curtice Consulting, Washington Crossing, PA, USA
Abstract :
The development and behavior of a new model for Motorola´s LDMOS transistor is described. The model includes self-heating effects, produces accurate small-signal simulations as well as large-signal, harmonic-balance simulations and also operates in the transient mode. It is simpler than previous models, yet it accurately predicts mixed signal effects, such as intermodulation distortion.
Keywords :
UHF field effect transistors; capacitance; elemental semiconductors; equivalent circuits; intermodulation distortion; microwave field effect transistors; microwave power transistors; power MOSFET; semiconductor device models; silicon; thermal analysis; 0.5 to 12 GHz; IMD prediction; Motorola LDMOS transistor; Si; Si RF LDMOS FETs; dynamic electro-thermal nonlinear model; harmonic-balance simulations; intermodulation distortion; large-signal simulations; mixed signal effects; self-heating effects; small-signal simulations; transient mode; Capacitance; Circuit simulation; Current measurement; FETs; Isothermal processes; Nonlinear equations; Radio frequency; Silicon; Temperature; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779792
