Noise characterization of MOSFETs for RF oscillator design

Author

Aoki, H. ; Shimasue, M.

Author_Institution

Design & Test Consulting Solution Service Div., Hewlett-Packard Japan Ltd., Tokyo, Japan

Volume

2

fYear

1999

fDate

13-19 June 1999

Firstpage

423

Abstract

This paper presents 1/f noise measurement and modeling techniques of sub-micron MOSFETs. The capacitor and inductor free biasing circuit enables quick bias tuning. A new MOSFET 1/f noise model has been developed to represent more accurate noise current spectrum density characteristics than existing models. The direct parameter extraction method for the new noise model does not use any corner frequencies. Phase noise of an RF oscillator was analyzed for verification.

Keywords

1/f noise; MOSFET; UHF field effect transistors; UHF oscillators; circuit noise; electric noise measurement; equivalent circuits; flicker noise; microwave field effect transistors; microwave oscillators; phase noise; radiofrequency oscillators; semiconductor device measurement; semiconductor device models; semiconductor device noise; 1/f noise measurement; 1/f noise modeling; RF oscillator design; RF oscillator phase noise; bias tuning; biasing circuit; direct parameter extraction method; noise characterization; noise current spectrum density characteristics; submicron MOSFET; Capacitors; Circuit noise; Circuit optimization; Inductors; MOSFETs; Noise measurement; Oscillators; Parameter extraction; Phase noise; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779793

Filename

779793