Title :
Cubic phase gallium nitride epitaxially formed on GaAs or GaInAs at low temperature with a NH3 DECR plasma
Author :
Nissim, Y.I. ; Lescaut, B. ; Leprince, L. ; Patriarche, G. ; Bresse, J.F.
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
Abstract :
GaN is a compound semiconductor attractive for its blue band gap (3.45 eV) and its large saturated electron drift velocity. Unfortunately, because of its large ionicity, GaN condense in the Wurtzite structure. It has been shown, that it was possible to obtain an epitaxial zinc blende structure using an appropriate growth technics. In this paper it is shown that a simple interaction of a NH3 DECR Plasma with a GaAs or InGaAs surface can result in a surface transformation in which an important amount of nitrogen is incorporated at the place of the As, leading to the formation of epitaxial cubic nitrides. The temperature of the treatment is as low as 450°C for GaAs and 220°C for GaInAs. X-ray diffraction, AFM and high resolution TEM are utilized to analyse the growth process
Keywords :
III-V semiconductors; X-ray diffraction; atomic force microscopy; gallium compounds; plasma deposition; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; vapour phase epitaxial growth; wide band gap semiconductors; 220 C; 450 C; AFM; GaAs; GaAs substrate; GaInAs; GaInAs substrate; GaN; NH3; NH3 DECR plasma; TEM; X-ray diffraction; band gap; compound semiconductor; cubic phase gallium nitride; electron drift velocity; ionicity; low temperature epitaxial growth; surface transformation; zinc blende structure; Electron mobility; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Indium gallium arsenide; Nitrogen; Photonic band gap; Plasma temperature; Surface treatment; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600039
