An accurate physics-based large-signal model for high power SiGe BJTs

Author

Xiangdong Zhang ; Henderson, G. ; Souchuns, C.

Author_Institution

ISBU, Lowell, MA, USA

Volume

2

fYear

1999

fDate

13-19 June 1999

Firstpage

435

Abstract

A physics-based large-signal model is developed to simulate the power performance of SiGe BJTs. The model is a complement to the Gummel-Poon model through the inclusion of three major effects: impact ionization and breakdown, maximum current due to the Kirk effect, and packaging parasitics. The model can be simply implemented in a circuit simulator, can be used to accurately simulate DC and large-signal RF performance of the device, and can be used in circuit design. The model has been validated using a 10 W amplifier at 2 GHz, and the results demonstrate the excellent accuracy of the model in predicting power, efficiency, and linearity. This model is an effective tool in designing power amplifiers for analogue and digital communications applications.

Keywords

Ge-Si alloys; UHF bipolar transistors; impact ionisation; power bipolar transistors; semiconductor device breakdown; semiconductor device models; semiconductor device packaging; semiconductor materials; 2 GHz; Kirk effect; SiGe; breakdown; circuit design; circuit simulator; efficiency prediction; high power SiGe BJT; impact ionization; large-signal RF performance; linearity prediction; maximum current; packaging parasitics; physics-based large-signal model; power amplifier design; power performance simulation; Circuit simulation; Electric breakdown; Germanium silicon alloys; Impact ionization; Kirk field collapse effect; Packaging; Power amplifiers; Predictive models; Radiofrequency amplifiers; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779796

Filename

779796