Time domain modeling of PIN control and limiter diodes

Author

Caverly, R.H. ; Quinn, M.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Villanova Univ., PA, USA

Volume

2

fYear

1999

fDate

13-19 June 1999

Firstpage

719

Abstract

A time domain model for the microwave and RF PIN switching diode is presented. The model is suitable for use in such time domain simulators as SPICE and simulates the important I-region charge storage phenomenon and its effect on the PIN diode behaviour in active circuits such as switches, attenuators and power limiters. For a SPST switch, the variation in PIN diode impedance is shown to affect the insertion loss in the switch. For microwave power limiters, spike leakage variation versus frequency for different RF voltages is also presented, showing the reduction in power limiting with increasing frequency for a given PIN diode.

Keywords

SPICE; leakage currents; microwave diodes; microwave limiters; microwave switches; p-i-n diodes; semiconductor device models; time-domain analysis; I-region charge storage phenomenon; PIN control diodes; PIN limiter diodes; RF switching diode; SPICE; SPST switch; active circuits; insertion loss; microwave switching diode; power limiting; spike leakage variation; time domain modeling; Active circuits; Attenuators; Circuit simulation; Diodes; Impedance; Insertion loss; Radio frequency; SPICE; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779861

Filename

779861