Linear Drain Current Degradation of FG-pLEDMOS Transistor Under Pulse Gate Stress With Different Rising and Falling Edges

Linear drain current degradation of a field-gate p-channel lateral extended drain MOS (FG-pLEDMOS) transistor for different ac hot-carrier stress conditions has been experimentally investigated in this paper. It is noted that hot-carrier degradation strongly depends on the time of the rising and falling edges of the gate signal pulse. Faster rising and falling edges of the gate pulse will induce more serious hot-carrier degradation. Moreover, the experimental results reveal that the falling edges of the gate pulse show more distinct influence upon hot-carrier degradation than that of the rising edges. In this way, the pulse gate stress with fast falling edges should be considered for evaluating the hot-carrier-induced lifetime of a laterally diffused MOS working with fast gate signal pulse edges.