Low noise, low distortion, high frequency, fully differential CMOS transconductor

Author

Hill, C. ; Sun, Y. ; Szczepanski, S.

Author_Institution

Fac. of Eng., Hertfordshire Univ., Hatfield, UK

fYear

2000

fDate

2000

Firstpage

600

Lastpage

603

Abstract

This paper describes a CMOS transconductance element based upon two differential pairs whose outputs are summed to give a linear transfer characteristic. The circuit has been simulated using a 2 μm process from MOSIS, and results show that with a single 5 V supply, bandwidth in excess of 300 MHz, THD below 0.7% for a 1 V_pk-pk differential input signal, and dynamic range in excess of 70 dB can be achieved

Keywords

CMOS analogue integrated circuits; active networks; circuit feedback; circuit tuning; continuous time filters; frequency response; harmonic distortion; integrated circuit noise; linear network analysis; 1 V; 2 micron; 300 MHz; 5 V; CMOS transconductance element; HF fully differential transconductor; MOSIS process; common-mode feedback circuit; differential pairs; high frequency transconductor; linear transfer characteristic; low distortion transconductor; low noise CMOS transconductor; CMOS technology; Circuit noise; Circuit optimization; Circuit simulation; Equations; Frequency; Linearity; Threshold voltage; Transconductance; Transconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2000. IEEE APCCAS 2000. The 2000 IEEE Asia-Pacific Conference on

Conference_Location

Tianjin

Print_ISBN

0-7803-6253-5

Type

conf

DOI

10.1109/APCCAS.2000.913572

Filename

913572