• DocumentCode
    2998745
  • Title

    Proposal of new HfSiON CMOS fabrication process (HAMDAMA) for low standby power device

  • Author

    Aoyama, T. ; Maeda, T. ; Torii, K. ; Yamashita, K. ; Kobayashi, Y. ; Kamiyama, S. ; Miura, T. ; Kitajima, H. ; Arikado, T.

  • Author_Institution
    Semicond. Leading Edge Technol., Inc., Ibaraki, Japan
  • fYear
    2004
  • fDate
    13-15 Dec. 2004
  • Firstpage
    95
  • Lastpage
    98
  • Abstract
    The authors propose a practical half-masked Damascene-like full silicidation (HAMDAMA) process to fabricate dual gate HfSiON CMOSFET in which poly-Si and fully silicided (FUSI) NiSi gates are used for n-FET and p-FET, respectively. Using this process, Ion in p-FET was improved by thinner Teff(inv) and higher hole mobility than the conventional poly-Si gate process.
  • Keywords
    CMOS integrated circuits; MOSFET; hafnium compounds; hole mobility; low-power electronics; manufacturing processes; CMOS fabrication process; HAMDAMA; HfSiON-SiO2; fully silicided gates; half-masked Damascene-like full silicidation; hole mobility; low standby power device; n-FET; p-FET; poly-Si gate process; poly-Si gates; CMOS process; CMOSFETs; Counting circuits; Dielectrics; Electrodes; Fabrication; Hafnium; Nickel; Proposals; Silicidation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-8684-1
  • Type

    conf

  • DOI
    10.1109/IEDM.2004.1419075
  • Filename
    1419075
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2998745