DocumentCode :
2999073
Title :
Bandstructure effects in ballistic nanoscale MOSFETs
Author :
Rahman, Anisur ; Klimeck, Gerhard ; Boykin, Timothy B. ; Lundstrom, Mark
Author_Institution :
Sch. of ECE, Purdue Univ., West Lafayette, IN, USA
fYear :
2004
fDate :
13-15 Dec. 2004
Firstpage :
139
Lastpage :
142
Abstract :
Bandstructure effects on ballistic transport in ultra-thin-body unstrained and strained MOSFETs are investigated using a 20 band sp3d5s*-SO semi-empirical tight-binding model. It is observed that for unstrained Ge n-devices, the effective mass approach fails below 3 nm. Additionally, in strained Si p-MOSFETs, orientation of uniaxial compressive strain axis relative to quantum confinement direction substantially affects performance.
Keywords :
MOSFET; ballistic transport; band structure; elemental semiconductors; germanium; nanoelectronics; semiconductor device models; silicon; Ge; Si; ballistic nanoscale MOSFET; bandstructure effects; quantum confinement direction; uniaxial compressive strain axis; Atomic layer deposition; Atomic measurements; Ballistic transport; Capacitive sensors; Effective mass; Electrostatics; Equivalent circuits; MOSFETs; Particle scattering; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
Type :
conf
DOI :
10.1109/IEDM.2004.1419089
Filename :
1419089
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2999073
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