Title :
Dynamic response of buried heterostructure and stripe geometry λ/4 DFB semiconductor lasers
Author :
Ling, Y.L. ; Yu, S.F. ; Li, E.H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Abstract :
A comparison between different lateral confinement structures in DFB laser is analyzed with identical material parameters and structure in transverse and longitudinal directions. Results show that stripe geometry DFB lasers offer better dynamic response than buried heterostructure DFB lasers
Keywords :
carrier relaxation time; distributed feedback lasers; laser modes; laser theory; optical hole burning; semiconductor lasers; DFB semiconductor lasers; buried heterostructure; dynamic response; lateral confinement structures; longitudinal direction; material parameters; stripe geometry; transverse direction; Carrier confinement; Charge carrier lifetime; Damping; Frequency modulation; Geometrical optics; Geometry; Gratings; Optical materials; Semiconductor lasers; Semiconductor materials;
Conference_Titel :
Electron Devices Meeting, 1995., Proceedings 1995 IEEE Hong Kong
Print_ISBN :
0-7803-2919-8
DOI :
10.1109/HKEDM.1995.520640
