The potential of using refractory metals and barrier layers to generate high temperature interconnects

A method is described to generate high-temperature interconnects that consist of a barrier metallization and refractory metals. These systems have a number of attractive features over metal disilicides in terms of their electrical resistivity and their ability to form metallurgically stable contacts that inhibit silicon and dopant transport through them. It is shown that a specific system of W and TaN is stable and can be used at temperatures approaching 1000 degrees C in direct electrical contact with silicon for long process times. This barrier can also be placed between doped Si layers and high-temperature silicides to inhibit dopant outdiffusion during high-temperature processing. The utility of such systems for future applications in integrated circuit and sensor technology is discussed.<>