Title :
3.3 ps SiGe bipolar technology
Author :
Böck, J. ; Schäfer, H. ; Knapp, H. ; Aufinger, K. ; Wurzer, M. ; Boguth, S. ; Böttner, T. ; Stengl, R. ; Perndl, W. ; Meister, T.F.
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
A SiGe bipolar technology with a transit frequency of 225 GHz and a maximum oscillation frequency of 300 GHz is described. With a ring oscillator gate delay of 3.3 ps and a static frequency divider operating up to 102 GHz input frequency state-of-the-art circuit performance is achieved.
Keywords :
Ge-Si alloys; frequency dividers; millimetre wave bipolar transistors; oscillators; 225 GHz; 3.3E-12 s; 300 GHz; SiGe; SiGe bipolar technology; maximum oscillation frequency; ring oscillator gate delay; static frequency divider; transit frequency; Delay; Doping profiles; Frequency conversion; Germanium silicon alloys; Resistors; Ring oscillators; Silicon germanium; Space technology; Transistors; Voltage;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419124
