Title :
Challenges for the integration of metal gate electrodes
Author :
Schaeffer, J.K. ; Capasso, C. ; Fonseca, L.R.C. ; Samavedam, S. ; Gilmer, D.C. ; Liang, Y. ; Kalpat, S. ; Adetutu, B. ; Tseng, H.-H. ; Shiho, Y. ; Demkov, A. ; Hegde, R. ; Taylor, W.J. ; Gregory, R. ; Jiang, J. ; Luckowski, E. ; Raymond, M.V. ; Moore, K.
Author_Institution :
Adv. Products R&D Lab., Freescale Semicond. Inc., Austin, TX, USA
Abstract :
Integration challenges for metal gate electrodes including the presence of Fermi level pinning and the impact of interface chemistry on the effective metal work function are discussed. Gate stack thermal instabilities are explored, and for the first time results using tantalum-carbon based electrodes are presented.
Keywords :
CMOS integrated circuits; Fermi level; carbon; electrodes; interface states; metallisation; tantalum; thermal stability; work function; C; Fermi level pinning; Ta; gate stack thermal instability; interface chemistry; metal gate electrodes; metal work function; tantalum-carbon based electrodes; Annealing; Capacitance; Chemistry; Dielectrics; Electrodes; FETs; Hafnium oxide; Laboratories; Platinum; Research and development;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419135
