DocumentCode :
3000345
Title :
Challenges in Cu/low-k integration
Author :
Liang, Mong-Song
Author_Institution :
Adv. Module Technol. Div., Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
fYear :
2004
fDate :
13-15 Dec. 2004
Firstpage :
313
Lastpage :
316
Abstract :
Advanced BEOL materials matching in chemical, thermal, and mechanical properties remain a challenge to the industry. New failure modes associated with BEOL reliability hinder the mass production of Cu/low-k technology. With 15% IMD effective-K reduction target, low-K, ESL, and metal pitch/height ratio optimization are crucial. Integrated module built-in reliability robustness is to assure stable production. Physical, electrical, reliability, and manufacturability aspects of individual module require full characterization. Implementations of proper queue-time control and iAPC between modules will minimize excursions and increase process window.
Keywords :
copper; integrated circuit interconnections; integrated circuit reliability; BEOL reliability; Cu; Cu/low-k integration; built-in reliability robustness; chemical property; iAPC; materials matching; mechanical property; metal pitch; process window; production stability; queue time control; thermal property; Capacitive sensors; Chemical industry; Chemical technology; Dielectrics; Manufacturing industries; Production; Robustness; Samarium; Semiconductor device manufacture; Semiconductor materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
Type :
conf
DOI :
10.1109/IEDM.2004.1419143
Filename :
1419143
Link To Document :
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