Challenges in Cu/low-k integration

Author

Liang, Mong-Song

Author_Institution

Adv. Module Technol. Div., Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

313

Lastpage

316

Abstract

Advanced BEOL materials matching in chemical, thermal, and mechanical properties remain a challenge to the industry. New failure modes associated with BEOL reliability hinder the mass production of Cu/low-k technology. With 15% IMD effective-K reduction target, low-K, ESL, and metal pitch/height ratio optimization are crucial. Integrated module built-in reliability robustness is to assure stable production. Physical, electrical, reliability, and manufacturability aspects of individual module require full characterization. Implementations of proper queue-time control and iAPC between modules will minimize excursions and increase process window.

Keywords

copper; integrated circuit interconnections; integrated circuit reliability; BEOL reliability; Cu; Cu/low-k integration; built-in reliability robustness; chemical property; iAPC; materials matching; mechanical property; metal pitch; process window; production stability; queue time control; thermal property; Capacitive sensors; Chemical industry; Chemical technology; Dielectrics; Manufacturing industries; Production; Robustness; Samarium; Semiconductor device manufacture; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419143

Filename

1419143