DocumentCode
3000410
Title
A study of the properties of RF sputtered MgXZn1-X O thin films
Author
Lei, Yu ; Li, Zhao ; Yi-min, Cui ; Zhi-yong, Zhang
Author_Institution
Dept. of Phys., Beihang Univ., Beijing
fYear
2008
fDate
July 28 2008-Aug. 1 2008
Firstpage
38
Lastpage
40
Abstract
MgXZn1-XO, a ZnO-based ternary compound, has been recognized as a promising material to be used in UV light emitting devices, UV laser diodes and UV detectors. In this paper, a batch of MgxZn1-xO films were fabricated using radio frequency sputtering on glass substrates with a Mg0.32Zn0.68O target. Then the structure and the optical properties of these films after being treated at different annealing temperatures were studied.
Keywords
II-VI semiconductors; annealing; magnesium compounds; semiconductor growth; semiconductor thin films; sputter deposition; zinc compounds; MgXZn1-XO; RF sputtered thin films; SiO2; UV detectors; UV laser diodes; UV light emitting devices; annealing temperatures; glass substrates; optical properties; radio frequency sputtering; structural properties; Annealing; Glass; Optical films; Optical materials; Radio frequency; Sputtering; Substrates; Temperature; X-ray diffraction; Zinc oxide; Mgx Zn1-x O; RF sputtered; annealing; thin films;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on
Conference_Location
Sydney, SA
ISSN
1097-2137
Print_ISBN
978-1-4244-2716-1
Electronic_ISBN
1097-2137
Type
conf
DOI
10.1109/COMMAD.2008.4802087
Filename
4802087
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