Title :
A novel solution for porous low-k dual damascene post etch stripping/clean with supercritical CO2 technology for 65nm and beyond applications
Author :
Wang, C.Y. ; Wu, W.J. ; Yang, C.M. ; Tseng, W.H. ; Chen, H.C. ; Bao, T.I. ; Lo, Henry ; Wang, J. ; Yu, C.H. ; Liang, M.S.
Author_Institution :
Taiwan Semicond. Manuf. Co., Ltd., Hsing-Chu, Taiwan
Abstract :
Supercritical C02 technology for single and dual damascene post etch stripping and clean was successfully demonstrated on 65nm technology node. Both bulk film composition analysis and electrical performance on 300mm have been investigated in the present work. With superior compatibility for porous low-k materials, complete removal of photo resist and residue with better leakage and RC delay performance was achieved for the first time.
Keywords :
dielectric materials; etching; integrated circuit technology; photoresists; porous materials; surface cleaning; 300 mm; 65 nm; CO2; RC delay performance; bulk film composition analysis; carbon dioxide technology; photo resist; porous low-k dual damascene; porous low-k materials; post etch stripping; supercritical technology; Ash; Cleaning; Curing; Dielectric films; Etching; Plasma applications; Plasma materials processing; Plasma properties; Plasma x-ray sources; Resists;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419148
