Anomalous transport in ferromagnetic GaAs/InxGa1-xAs/GaAs quantum well delta-doped with Mn and C

Author

Kulbachinskii, Vladimir ; Shchurova, Ljudmila ; Kuznetsov, Nicolay

Author_Institution

Low Temp. Phys. Dept., M.V. Lomonosov Moscow State Univ., Moscow

fYear

2008

fDate

July 28 2008-Aug. 1 2008

Firstpage

51

Lastpage

54

Abstract

Transport, magnetotransport and magnetic properties of structures with GaAs/In_0.17Ga_0.83As/GaAs quantum well (QW) in GaAs have been measured in the temperature interval 4.2<T<300 K. The structures were delta-doped by Mn and carbon to provide magnetic properties and enhanced p-type conductivity. The ferromagnetic phase up to 400 K was detected by SQUID magnetometer. Anomalous Hall-effect and negative magnetoresistance was observed at low temperatures. The calculations of temperature dependence of resistance have been carried out. The contributions of various hole scattering mechanisms are analyzed. The quantitative consistency of the calculated and measured temperature dependence of sheet resistance is found. The reasons for occurrence of negative magnetoresistance are explained quantitatively as the reduction of the spin-flip scattering by aligning spins by magnetic field.

Keywords

Hall effect devices; III-V semiconductors; SQUIDs; ferromagnetic materials; gallium arsenide; galvanomagnetic effects; manganese; quantum well devices; SQUID magnetometer; anomalous Hall-effect; anomalous transport; ferromagnetic quantum well; magnetic field; magnetic properties; magnetotransport; negative magnetoresistance; quantitative consistency; sheet resistance; spin-flip scattering; Conductivity measurement; Enhanced magnetoresistance; Gallium arsenide; Magnetic field measurement; Magnetic properties; Particle scattering; Phase detection; SQUID magnetometers; Temperature dependence; Temperature measurement; GaAs; component; ferromagnetizm; negative magnetoresistance; quantum well; spintronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on

Conference_Location

Sydney, SA

ISSN

1097-2137

Print_ISBN

978-1-4244-2716-1

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2008.4802090

Filename

4802090