DocumentCode
3000575
Title
255 nm interconnected micro-pixel deep ultraviolet light emitting diodes
Author
Khan, M. Asif ; Wu, Shuai ; Sun, Wenhong ; Chitnis, Ashay ; Adivarahan, Vinod ; Shatalov, Maxim ; Yang, Jinwei
Author_Institution
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA
fYear
2004
fDate
13-15 Dec. 2004
Firstpage
347
Lastpage
350
Abstract
We report on AlGaN based deep ultraviolet (UV) light emitting diodes (LED) with a micro-pixel design and emission at 255 nm. The micro-pixel design was adopted to improve the lateral current spreading and to reduce the operation voltages. For a 10×10 interconnected 25 μm diameter micro-pixel design the device series resistance as low as 17.5 Q was measured. For a packaged LED, output powers of 0.9 mW at 160 mA dc and 3.4 mW at 240 mA pulse pump currents were measured.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; light emitting diodes; ultraviolet sources; wide band gap semiconductors; 255 nm; AlGaN; deep ultraviolet light emitting diodes; micro-pixel design; pulse pump currents; series resistance; Buffer layers; Capacitive sensors; Current measurement; Electrical resistance measurement; Fabrication; Light emitting diodes; Light sources; Power generation; Pulse measurements; Superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN
0-7803-8684-1
Type
conf
DOI
10.1109/IEDM.2004.1419153
Filename
1419153
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