• DocumentCode
    3000634
  • Title

    Novel infrared phototransistors for atmospheric CO2 profiling at 2 μm wavelength

  • Author

    Refaat, Tamer F. ; Abedin, M. Nurul ; Sulima, Oleg V. ; Singh, Upendra N. ; Ismail, Syed

  • Author_Institution
    NASA Langley Res. Center, Sci. & Technol. Corp., Hampton, VA, USA
  • fYear
    2004
  • fDate
    13-15 Dec. 2004
  • Firstpage
    355
  • Lastpage
    358
  • Abstract
    Two-micron detectors are critical for atmospheric carbon dioxide profiling using the lidar technique. The characterization results of a novel infrared AlGaAsSb/ InGaAsSb phototransistor are reported. Emitter dark current variation with the collector-emitter voltage at different temperatures is acquired to examine the gain mechanism. Spectral response measurements resulted in responsivity as high as 2650 AAV at 2.05 μm wavelength. Bias voltage and temperature effects on the device responsivity are presented. The detectivity of this device is compared to InGaAs and HgCdTe devices.
  • Keywords
    aluminium compounds; atmospheric measuring apparatus; carbon compounds; gallium arsenide; indium compounds; photodetectors; phototransistors; remote sensing; 2 micron; AlGaAsSb-InGaAsSb; CO2; atmospheric carbon dioxide profiling; collector-emitter voltage; device responsivity; emitter dark current variation; infrared phototransistors; lidar technique; micron detectors; temperature effects; Atmospheric measurements; Carbon dioxide; Dark current; Gas detectors; Indium gallium arsenide; Laser radar; Phototransistors; Temperature; Voltage; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-8684-1
  • Type

    conf

  • DOI
    10.1109/IEDM.2004.1419155
  • Filename
    1419155