DocumentCode
3000634
Title
Novel infrared phototransistors for atmospheric CO2 profiling at 2 μm wavelength
Author
Refaat, Tamer F. ; Abedin, M. Nurul ; Sulima, Oleg V. ; Singh, Upendra N. ; Ismail, Syed
Author_Institution
NASA Langley Res. Center, Sci. & Technol. Corp., Hampton, VA, USA
fYear
2004
fDate
13-15 Dec. 2004
Firstpage
355
Lastpage
358
Abstract
Two-micron detectors are critical for atmospheric carbon dioxide profiling using the lidar technique. The characterization results of a novel infrared AlGaAsSb/ InGaAsSb phototransistor are reported. Emitter dark current variation with the collector-emitter voltage at different temperatures is acquired to examine the gain mechanism. Spectral response measurements resulted in responsivity as high as 2650 AAV at 2.05 μm wavelength. Bias voltage and temperature effects on the device responsivity are presented. The detectivity of this device is compared to InGaAs and HgCdTe devices.
Keywords
aluminium compounds; atmospheric measuring apparatus; carbon compounds; gallium arsenide; indium compounds; photodetectors; phototransistors; remote sensing; 2 micron; AlGaAsSb-InGaAsSb; CO2; atmospheric carbon dioxide profiling; collector-emitter voltage; device responsivity; emitter dark current variation; infrared phototransistors; lidar technique; micron detectors; temperature effects; Atmospheric measurements; Carbon dioxide; Dark current; Gas detectors; Indium gallium arsenide; Laser radar; Phototransistors; Temperature; Voltage; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN
0-7803-8684-1
Type
conf
DOI
10.1109/IEDM.2004.1419155
Filename
1419155
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