• DocumentCode
    30008
  • Title

    Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept

  • Author

    Basler, Thomas ; Pfaffenlehner, Manfred ; Felsl, Hans Peter ; Niedernostheide, F.-J. ; Pfirsch, F. ; Schulze, H.-J. ; Baburske, R. ; Lutz, Josef

  • Author_Institution
    Dept. of Power Electron. & EMC, Chemnitz Univ. of Technol., Chemnitz, Germany
  • Volume
    8
  • Issue
    3
  • fYear
    2014
  • fDate
    May-14
  • Firstpage
    205
  • Lastpage
    212
  • Abstract
    The surge-current ruggedness of free-wheeling diodes can be improved by implementing the self-adjusting p emitter efficiency diode concept (SPEED). Simulations indicate that the switching ruggedness is reduced because of the occurrence of cathode-side filaments during reverse-recovery. Experiments confirm the weak switching performance of such a diode in comparison to a conventional diode. By implementing the controlled injection of backside holes concept cathode-side filaments can be suppressed. However, this measure is not sufficient to regain the switching ruggedness of a conventional diode. It is also necessary to fully embed the p+-areas of the SPEED anode in the low-doped p-type area to avoid high electrical field strengths at the p+p-junction and pinning of anode-side filaments. However, anode-side adjustments for improving the switching ruggedness can reduce the benefit of the SPEED concept regarding the surge-current capability.
  • Keywords
    power semiconductor switches; semiconductor device models; semiconductor device reliability; semiconductor diodes; SPEED; anode side filament pinning; backside holes; cathode side filaments; controlled injection; diode surge current capability; diode switching ruggedness; free wheeling diodes; high electrical field strength; p+p-junction; reverse recovery; self-adjusting p emitter efficiency diode concept;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices & Systems, IET
  • Publisher
    iet
  • ISSN
    1751-858X
  • Type

    jour

  • DOI
    10.1049/iet-cds.2013.0216
  • Filename
    6824028