DocumentCode
3000845
Title
A novel 6H-SiC UMOSFET_ACCUFET with low specific on-resistance and peak electric field
Author
Fathipour, Morteza ; Peyvast, Negin ; Shoaazar, Negar
Author_Institution
Sch. of Electr. & Comput. Eng., Univ. of Tehran, Tehran
fYear
2008
fDate
July 28 2008-Aug. 1 2008
Firstpage
140
Lastpage
143
Abstract
In this paper, a novel power UMOSFET_ACCUFET structure, based-on 6H-SiC, has been investigated. By varying the dimensions and doping concentrations of specific regions, we have obtained optimized electric field and on-resistance. Two approaches have been applied to the simple UMOSFET structure, both of which result in lower peak electric field in the device in the blocking state.
Keywords
MOSFET; 6H-SiC UMOSFET_ACCUFET; SiC; low specific on-resistance; optimized electric field; peak electric field; power transistor; Doping; Electric breakdown; Electron mobility; Power transistors; Semiconductor device breakdown; Silicon carbide; Temperature; Thermal conductivity; Voltage; Wide band gap semiconductors; SiC; UMOSFET; on-resistance; peak electric field; power transistor;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on
Conference_Location
Sydney, SA
ISSN
1097-2137
Print_ISBN
978-1-4244-2716-1
Electronic_ISBN
1097-2137
Type
conf
DOI
10.1109/COMMAD.2008.4802111
Filename
4802111
Link To Document