Title :
An analytical source-and-drain series resistance model of quarter micron MOSFETs and its influence on circuit simulation
Author :
Gondro, Elmar ; Klein, Peter ; Schuler, Franz
Author_Institution :
Inst. of Electron., Bundeswehr Univ., Neubiberg, Germany
Abstract :
An analytical model to describe the bias dependent series resistances RS and RD of LDD MOSFETs down to quarter micron and below is introduced. Comparing measurement and simulation results of CMOS ring oscillators it has been found that for low voltage applications (Vdd=1 V) an incorrect description of RS and RD can cause a simulation error of up to 30% in the delay time of CMOS inverters
Keywords :
CMOS integrated circuits; MOSFET; circuit simulation; delays; integrated circuit modelling; low-power electronics; CMOS ring oscillators; LDD MOSFETs; analytical source-and-drain series resistance model; bias dependent series resistances; circuit simulation; delay time; low voltage applications; measurement results; quarter micron MOSFETs; simulation error; simulation results; Analytical models; Channel bank filters; Circuit simulation; Contact resistance; Doping; Electrical resistance measurement; Length measurement; Low voltage; MOSFETs; Time measurement;
Conference_Titel :
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5471-0
DOI :
10.1109/ISCAS.1999.780131
