Title :
Design-oriented substrate noise coupling macromodels for heavily doped CMOS processes
Author :
Samavedam, A. ; Mayaram, K. ; Fiez, Terri
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
Abstract :
Macromodels for substrate noise coupling in heavily doped substrates have been developed. These models are simple and express the substrate coupling directly as a function of the spacing between the injection and sensing contacts. The models require only six parameters that can be readily extracted from a few device simulations and measurements. The model is validated for a 2 μm and a 0.5 μm CMOS process where it is shown that the simple model predicts the noise coupling accurately
Keywords :
CMOS integrated circuits; circuit simulation; heavily doped semiconductors; integrated circuit design; integrated circuit modelling; integrated circuit noise; 0.5 micron; 2 micron; IC design; device simulations; heavily doped CMOS processes; injection contacts; sensing contacts; substrate noise coupling macromodels; CMOS process; Circuit simulation; Computer science; Coupling circuits; Curve fitting; Frequency; Impedance; Integrated circuit modeling; Predictive models; Semiconductor device modeling;
Conference_Titel :
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5471-0
DOI :
10.1109/ISCAS.1999.780134
