Title :
High voltage devices - a milestone concept in power ICs
Author :
Udrea, F. ; Trajkovic, T. ; Amaratunga, G.A.J.
Author_Institution :
Cambridge Semicond. Ltd, MA, USA
Abstract :
We report for the first time a technology concept in power ICs. We present detailed experimental data obtained during several years of development and demonstrate the application of the new technology in a range of highly efficient switch mode power supplies (SMPS). This technology is capable of delivering more than 3 times higher current density (30 A/cm2), and two to five times the switching speed (500 kHz for 650V rated devices) of state-of-the-art power IC technologies such as junction-isolation or silicon-on-insulator. The new concept is based on merging of the MEMS and CMOS SOI technologies to increase the breakdown ability of the power device and reduce its output capacitance. The MEMS step is fully CMOS compatible and consists of a back-side deep reactive ion etching (DRIE) performed selectively in the drift region of the power device to realize multiple membranes of ultra-thin silicon-dielectric films.
Keywords :
etching; integrated circuit technology; micromechanical devices; power integrated circuits; silicon-on-insulator; switched mode power supplies; CMOS SOI technology; MEMS; deep reactive ion etching; high voltage devices; junction-isolation technology; power IC; power device; silicon-on-insulator technology; switch mode power supplies; ultra-thin silicon-dielectric films; CMOS technology; Current density; Electric breakdown; Merging; Micromechanical devices; Power integrated circuits; Silicon on insulator technology; Switched-mode power supply; Switches; Voltage;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419185
