Title :
Low leakage reliability characterization methodology for advanced CMOS with gate oxide in the 1nm range
Author :
Chung, Steve S. ; Feng, H.J. ; Hsich, Y.S. ; Liu, Alex ; Lin, W.M. ; Chen, D.F. ; Ho, J.H. ; Huang, K.T. ; Yang, C.K. ; Cheng, Osbert ; Sheng, Y.C. ; Wu, D.Y. ; Shiau, W.T. ; Chien, S.C. ; Liao, Kuan ; Sun, S.W.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A low leakage characterization technique for the lateral profiling of interface and oxide traps in a 12A-16A range gate oxide CMOS device has been demonstrated. The approach being taken includes an incremental frequency charge-pumping (IFCP) measurement and a neutralization procedure such that interface and oxide traps can be separated. The most critical steps are the elimination of leakage current during measurement and a neutralization procedure, which enables accurate determination of interface and oxide traps. This method has been demonstrated successfully for an advanced sub-100nm CMOS devices. As an important merit for its application, evaluations of HC reliability and NBTI effect have also been demonstrated. Evaluations of gate oxide qualities with plasma nitridation in both n- and p-MOSFET reliabilities have been properly described based on the current analysis technique.
Keywords :
CMOS integrated circuits; hot carriers; integrated circuit reliability; interface states; nitridation; 1 nm; 100 nm; 12 to 16 angstroms; 1nm range; CMOS device; HC reliability; IFCP measurement; NBTI effect; gate oxide; incremental frequency charge-pumping; interface-oxide traps lateral profiling; leakage current; low leakage reliability characterization; n-MOSFET reliabilities; neutralization procedure; p-MOSFET reliabilities; plasma nitridation; Charge pumps; Current measurement; Frequency measurement; Leakage current; MOSFET circuits; Niobium compounds; Plasma applications; Plasma devices; Plasma measurements; Titanium compounds;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419193