MOCVD grown AlInAs/GaInAs/InP HEMTs with InP etch-stop layer

Author

Nawaz, M. ; Strupinski, W. ; Stenarson, J. ; Persson, S.H.M. ; Zirath, H.

Author_Institution

Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

1

fYear

2000

fDate

2000

Firstpage

116

Abstract

We report on MOCVD grown single delta doped AlInAs/GaInAs/InP HEMTs. The devices´ small-signal behavior at room and cryogenic temperatures were evaluated. It is found that HEMTs with a thin InP top surface layer provide high threshold voltage uniformity, and less thermal stress degradation compared to conventional AlInAs/GaInAs/InP HEMTs. Furthermore, hot electron stress measurements have been conducted on passivated and unpassivated HEMTs

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; semiconductor device measurement; AlInAs-GaInAs-InP; InP; MOCVD grown HEMT; cryogenic temperatures; hot electron stress measurements; passivated HEMT; room temperature; single delta doping; small-signal behavior; thermal stress degradation; threshold voltage uniformity; unpassivated HEMT; Cryogenics; Etching; HEMTs; Indium phosphide; MOCVD; MODFETs; Temperature; Thermal degradation; Thermal stresses; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Radar and Wireless Communications. 2000. MIKON-2000. 13th International Conference on

Conference_Location

Wroclaw

Print_ISBN

83-906662-3-5

Type

conf

DOI

10.1109/MIKON.2000.913888

Filename

913888