• DocumentCode
    30022
  • Title

    A Class-G Switched-Capacitor RF Power Amplifier

  • Author

    Yoo, Sang-Min ; Walling, Jeffrey S. ; Degani, O. ; Jann, Benjamin ; Sadhwani, Ram ; Rudell, J.C. ; Allstot, David J.

  • Author_Institution
    Qualcomm Atheros, San Jose,
  • Volume
    48
  • Issue
    5
  • fYear
    2013
  • fDate
    May-13
  • Firstpage
    1212
  • Lastpage
    1224
  • Abstract
    A switched-capacitor power amplifier (SCPA) that realizes an envelope elimination and restoration/polar class-G topology is introduced. A novel voltage-tolerant switch enables the use of two power supply voltages which increases efficiency and output power simultaneously. Envelope digital-to-analog conversion in the polar transmitter is achieved using an SC RF DAC that exhibits high efficiency at typical output power backoff levels. In addition, high linearity is achieved and no digital predistortion is required. Implemented in 65 nm CMOS, the measured peak output power and power-added efficiency (PAE) are 24.3 dBm and 43.5%, respectively, whereas when amplifying 802.11g 64-QAM OFDM signals, the average output power and PAE are 16.8 dBm and 33%, respectively. The measured EVM is 2.9%.
  • Keywords
    EER; Envelope elimination and restoration; RF DAC; SCPA; polar transmitter; power amplifier; switched-capacitor power amplifier;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2013.2252754
  • Filename
    6506135