Title :
Resistive contrast imaging applied to multilevel interconnection failure analysis
Author :
Cole, Edward I., Jr.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Abstract :
Resistive contrast imaging (RCI) is a new failure analysis technique that uses a scanning electron microscope to generate a relative resistance map of an integrated circuit. The RCI map can be used to localize abrupt changes in resistance and verify continuity. Results using RCI on several two-level interconnection devices are described. The images demonstrate how RCI can be used to differentiate between levels and to localize metal shorts and opens. Methods for improving image quality and level differentiation as well as future development work are discussed
Keywords :
failure analysis; integrated circuit testing; metallisation; scanning electron microscopy; image quality; integrated circuit; level differentiation; metal shorts; multilevel interconnection failure analysis; opens; relative resistance map; resistive contrast imaging; scanning electron microscope; two-level interconnection devices; Circuit testing; Displays; Electron beams; Failure analysis; Image analysis; Image quality; Integrated circuit interconnections; Laboratories; Microelectronics; Scanning electron microscopy;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1989.78020
