Title :
A 3.2-V operation single-chip AlGaAs/GaAs HBT MMIC power amplifier for GSM900/1800 dual-band applications
Author :
Yamamoto, K. ; Shimura, T. ; Asada, T. ; Okuda, T. ; Mori, K. ; Choumei, K. ; Suzuki, S. ; Miura, T. ; Fujimoto, S. ; Hattori, R. ; Nakano, H. ; Hosogi, K. ; Otsuji, J. ; Inoue, A. ; Yajima, K. ; Ogata, T. ; Mijazaki, Y. ; Yamanouchi, M.
Author_Institution :
High Freq. & Optical Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A 3.2-V operation single-chip HBT MMIC power amplifier has been successfully developed for GSM900/1800 applications, featuring on-chip bias circuits switched in turn between 900 MHz and 1800 MHz. The IC delivers a P/sub out/ of over 34.5 dBm and a PAE of over 50% for GSM900, a 32-dBm P/sub out/ and a 42% PAE for GSM1800 (DCS 1800).
Keywords :
III-V semiconductors; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; aluminium compounds; bipolar MMIC; cellular radio; gallium arsenide; heterojunction bipolar transistors; 1800 MHz; 3.2 V; 42 percent; 900 MHz; AlGaAs-GaAs; DCS 1800; GSM 1800; GSM900; HBT MMIC power amplifier; III-V semiconductors; PAE; dual-band applications; on-chip bias circuits; Circuits; Dual band; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; MMICs; Operational amplifiers; Power amplifiers; Semiconductor optical amplifiers; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.780210
